Title of article
Electron beam induced fragmentation of fullerene derivatives
Author/Authors
Robinson، نويسنده , , A.P.G. and Palmer، نويسنده , , R.E. and Tada، نويسنده , , T. and Kanayama، نويسنده , , T. and Preece، نويسنده , , J.A. and Philp، نويسنده , , D. and Jonas، نويسنده , , U. and Deiderich، نويسنده , , F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
5
From page
586
To page
590
Abstract
Spin coating has been used to produce films of various chemical derivatives of C60 on the hydrogen terminated silicon (100) surface. Irradiation of these films using a 20 keV electron beam has been found to reduce substantially their dissolution rate in organic solvents such as monochlorobenzene and chloroform. Raman and FTIR spectroscopy have shown that the reduced solubility of the derivative films is due to fragmentation of the molecules. The electron dose threshold of the derivative films for fragmentation is between 10−3 and 10−2 C/cm2, suggesting that these derivatives could be used as electron beam resists.
Journal title
Chemical Physics Letters
Serial Year
1998
Journal title
Chemical Physics Letters
Record number
1774033
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