Author/Authors :
Robinson، نويسنده , , A.P.G. and Palmer، نويسنده , , R.E. and Tada، نويسنده , , T. and Kanayama، نويسنده , , T. and Preece، نويسنده , , J.A. and Philp، نويسنده , , D. and Jonas، نويسنده , , U. and Deiderich، نويسنده , , F.، نويسنده ,
Abstract :
Spin coating has been used to produce films of various chemical derivatives of C60 on the hydrogen terminated silicon (100) surface. Irradiation of these films using a 20 keV electron beam has been found to reduce substantially their dissolution rate in organic solvents such as monochlorobenzene and chloroform. Raman and FTIR spectroscopy have shown that the reduced solubility of the derivative films is due to fragmentation of the molecules. The electron dose threshold of the derivative films for fragmentation is between 10−3 and 10−2 C/cm2, suggesting that these derivatives could be used as electron beam resists.
