Author/Authors :
Kuznetsov، نويسنده , , V.L. and Butenko، نويسنده , , Yu.V. and Chuvilin، نويسنده , , A.L. and Romanenko، نويسنده , , A.I. and Okotrub، نويسنده , , A.V.، نويسنده ,
Abstract :
Here we present the result of measurements of electrical resistivity of ultra-disperse diamonds (UDD) with different graphitization degrees and onion-like carbon (OLC) prepared by vacuum annealing of UDD samples at various fixed temperatures. Intermediate samples contain particles with a diamond core covered by closed curved graphitic shells. The temperature dependence of electrical resistivity ρ(T) of these structures is characteristic for the systems with localized electrons and variable hopping-length hopping conductivity (VHLHC). The data on sample resistance are discussed in terms of the variation of dimensionality of conductivity and changing the number of defects in the system.