Title of article
Low temperature growth of vertically aligned carbon nanotubes by thermal chemical vapor deposition
Author/Authors
Lee، نويسنده , , Cheol Jin and Son، نويسنده , , Kwon Hee and Park، نويسنده , , Jeunghee and Yoo، نويسنده , , Jae Eun and Huh، نويسنده , , Yoon and Lee، نويسنده , , Jeong Yong، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
113
To page
117
Abstract
Vertically well-aligned carbon nanotubes (CNTs) are grown on Fe-deposited silicon oxide substrate at 550°C by thermal chemical vapor deposition of C2H2 gas. We employed two-stage heating technique that the reactants heated at 850°C in the first zone flow into the second zone maintained at 550°C for CNT growth. The CNTs have bamboo structure, closed tip, and defective graphite sheets.
Journal title
Chemical Physics Letters
Serial Year
2001
Journal title
Chemical Physics Letters
Record number
1775524
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