Title of article :
Ab initio study of the lowest 3Σ−, 3Π and 1Σ+ states of the SiN+ cation
Author/Authors :
Cai، نويسنده , , Z.-L and François، نويسنده , , J.P، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
11
From page :
69
To page :
79
Abstract :
The equilibrium bond lengths, harmonic frequencies, first-order anharmonicity constants, rotational constants, centrifugal distortion constants, and rotation–vibrational constants, as well as the dipole moments, excitation and dissociation energies for the lowest 3Σ−, 3Π and 1Σ+ states of SiN+ have been calculated using CASSCF, CMRCI, CCSD(T) and density functional (B3LYP and B3PW91) theories combined with Dunningʹs correlation-consistent basis sets. Core-correlation effects have also been included in order to obtain a satisfactory accuracy for the spectroscopic constants. Our calculations strongly support 3Σ− as the ground state; the 3Π state lies only 460 cm−1 above the 3Σ− state, while the 1Σ+ state lies 6865 cm−1 above the ground state. Our DFT calculations on the triplet surface of SiN+ converge to the 3Π state which is clearly not the ground state.
Journal title :
Chemical Physics Letters
Serial Year :
1999
Journal title :
Chemical Physics Letters
Record number :
1776555
Link To Document :
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