Title of article :
Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition
Author/Authors :
Lee، نويسنده , , Cheol Jin and Park، نويسنده , , Jeunghee and Huh، نويسنده , , Yoon and Yong Lee، نويسنده , , Jeong، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
6
From page :
33
To page :
38
Abstract :
Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750–950°C. As the growth temperature increases from 750°C to 950°C, the growth rate increases by four times and the average diameter also increases from 30 nm to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950°C. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature.
Journal title :
Chemical Physics Letters
Serial Year :
2001
Journal title :
Chemical Physics Letters
Record number :
1776850
Link To Document :
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