Title of article
Structural and electronic properties of endohedral and exohedral complexes of silicon with C60
Author/Authors
Lu، نويسنده , , Jing and Zhou، نويسنده , , Yunsong and Zhang، نويسنده , , Shuang and Zhang، نويسنده , , Xinwei and Zhao، نويسنده , , Xiangeng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
39
To page
43
Abstract
Stimulated by the recent experiment that has added one silicon atom to C60, endohedral and exohedral complexes of silicon with C60 are investigated via semiempirical and first principles calculations. The ground state of the endohedral complex is the triplet state with the encased Si positioned off center, while the ground state of the exohedral complex is the singlet state with higher stability than the endohedral one. The Hartree–Fock HOMO and LUMO of the endohedral complex and the LUMO of the exohedral complex are localized at the dopant Si site. Both adducts have C2v symmetry and enhanced chemical reactivity.
Journal title
Chemical Physics Letters
Serial Year
2001
Journal title
Chemical Physics Letters
Record number
1776852
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