Title of article :
Structural and electronic properties of endohedral and exohedral complexes of silicon with C60
Author/Authors :
Lu، نويسنده , , Jing and Zhou، نويسنده , , Yunsong and Zhang، نويسنده , , Shuang and Zhang، نويسنده , , Xinwei and Zhao، نويسنده , , Xiangeng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
5
From page :
39
To page :
43
Abstract :
Stimulated by the recent experiment that has added one silicon atom to C60, endohedral and exohedral complexes of silicon with C60 are investigated via semiempirical and first principles calculations. The ground state of the endohedral complex is the triplet state with the encased Si positioned off center, while the ground state of the exohedral complex is the singlet state with higher stability than the endohedral one. The Hartree–Fock HOMO and LUMO of the endohedral complex and the LUMO of the exohedral complex are localized at the dopant Si site. Both adducts have C2v symmetry and enhanced chemical reactivity.
Journal title :
Chemical Physics Letters
Serial Year :
2001
Journal title :
Chemical Physics Letters
Record number :
1776852
Link To Document :
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