Hyperthermal (1–10 eV) cobalt deposition on Si(100)

Cobalt atoms with enhanced kinetic energy (1–10 eV) are deposited on room temperature Si(100) and compared to thermal energy cobalt atom deposition. Growth is monitored with Auger electron spectroscopy and low-energy electron diffraction. At low cobalt coverages, 2 monolayers (ML), thermal deposition measurements agree with previous work where uptake at surface sites occurs up to ≈ 0.5 ML, followed by filling subsurface sites. Auger data suggest that hyperthermal deposition occurs by direct subsurface adsorption.