Suppression of the Anderson localization of charge carriers on polysilane quantum wire

Comparison of the ESR and electronic absorption spectra of the radical ions of poly(cyclohexylmethylsilane) and poly(n-decyl-(s)-2-methylbutylsilane) has shown that the Anderson localization of charge carriers on part of the Si–Si polymer skeleton can be suppressed by replacing the pendant groups with bulky ones. Replacement reduces the flexibility of the polymer skeleton and therefore the dispersion of the resonance energies of the charge carriers between adjacent Si atoms, which suppresses the localization of the charge carriers arising from irregularity of the periodic potential field on the skeleton.