Title of article
Low temperature growth of multi-wall carbon nanotubes assisted by mesh potential using a modified plasma enhanced chemical vapor deposition system
Author/Authors
Kang، نويسنده , , H.S. and Yoon، نويسنده , , H.J. and Kim، نويسنده , , C.O and Hong، نويسنده , , J.P and Han، نويسنده , , I.T and Cha، نويسنده , , S.N and Song، نويسنده , , B.K and Jung، نويسنده , , J.E and Lee، نويسنده , , N.S. and Kim، نويسنده , , J.M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
196
To page
200
Abstract
Well-aligned carbon nanotubes have been synthesized on Corning and silicon substrates at extremely low temperatures of 450 °C using a slightly modified conventional plasma enhanced chemical vapor deposition (PECVD). The deposition system was intentionally designed to impose mesh potential on the substrates through an external electrode that was a critical parameter for low temperature growth. Mixture gases of C2H2 and NH3 with the imposed mesh potential of about 50 V effectively aligned multi-wall carbon nanotubes at 450 °C on Ni-coated substrates.
Journal title
Chemical Physics Letters
Serial Year
2001
Journal title
Chemical Physics Letters
Record number
1778578
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