Si nanowires synthesized by laser ablation of mixed SiC and SiO2 powders

By using a KrF excimer laser to ablate a target of SiC powder mixed with 10 wt.% SiO2 powder at 1400°C, Si nanowires were deposited on the inner wall of a ceramic tube. Transmission electron microscopy shows that the nanowires are around 14 nm in diameter and co-exist with a small amount of nanoparticles. High-resolution transmission electron microscopy shows that the nanowires are crystalline Si nanowires and the nanoparticles are cubic SiC. The intergrowth of heterocrystal nanowires and nanoparticles verifies that the oxide-assisted growth model of Si nanowires is reasonable.