Title of article
High charge flexibility of the surface dangling bonds on the Si(1 1 1)-7×7 surface and NH3 chemisorption: a DFT study
Author/Authors
Lu، نويسنده , , Xin and Xu، نويسنده , , Xin and Wang، نويسنده , , Nanqin and Zhang، نويسنده , , Qianer and Lin، نويسنده , , M.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
365
To page
370
Abstract
The dissociative chemisorption of NH3 on the Si(1 1 1)-7×7 surface has been investigated by means of hybrid density functional (B3LYP) cluster model calculations. It is shown that the dissociation of NH3 occurs readily on either the restatom site or the adatom site via a molecular precursor, giving rise to NH2 and H adspecies. Elaborate NBO (natural bond orbital) analyses reveal quite facile and unexpectedly significant charge transfer between the DBs (dangling bonds) of the restatom–adatom pair site even at a very large H3N–Si distance (e.g., 3.4 Å), evidencing the high charge flexibility of the DB states on the Si(1 1 1)-7×7 surface.
Journal title
Chemical Physics Letters
Serial Year
2002
Journal title
Chemical Physics Letters
Record number
1780173
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