Title of article
Catalytic growth and photoluminescence properties of semiconductor single-crystal ZnS nanowires
Author/Authors
Wang، نويسنده , , Yewu and Zhang، نويسنده , , Lide and Liang، نويسنده , , Changhao and Wang، نويسنده , , Guozhong and Peng، نويسنده , , Xinsheng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
314
To page
318
Abstract
Semiconductor single-crystal ZnS nanowires have been successfully synthesized in bulk quantities by a new, simple and low cost process based on thermal evaporation of ZnS powders onto a silicon substrate with the presence of Au catalyst. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) observations show that the ZnS nanowires have diameters about 30–60 nm and lengths up to several tens micrometers. The growth of ZnS nanowires is controlled by the conventional vapor–liquid–solid (VLS) mechanism. And the photoluminescence (PL) properties of these synthesized single-crystal ZnS nanowires have been presented in this Letter.
Journal title
Chemical Physics Letters
Serial Year
2002
Journal title
Chemical Physics Letters
Record number
1780703
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