Author/Authors :
Nakazaki، نويسنده , , Jotaro and Ishikawa، نويسنده , , Yoshihiro and Izuoka، نويسنده , , Akira and Sugawara، نويسنده , , Tadashi and Kawada، نويسنده , , Yuzo، نويسنده ,
Abstract :
Galvanostatic electrocrystallization of a TTF-based donor-radical (ETBN) has afforded an ion-radical salt. The radical site of ETBN is intact in the prepared salt and showed paramagnetic behavior. The salt is a semiconductor with conductivity of 10−2 S/cm at room temperature. Conductivity and magnetic properties are explained as a new type of an ion-radical salt derived from a π-conjugated donor-radical.
