On the structure and electron photodetachment spectra of Ga3P− and Ga3As−

The main features of the Ga3P− photodetachment spectrum reported by Taylor, Asmis, Xu and Neumark [Chem. Phys. Lett. 297 (1998) 133] have been assigned. Ga3P− has a 2B2(C2v) ground state. A near degeneracy is found between the 1A1(C2v) and the 1A1(C3v) states of Ga3P. The observed peaks are assigned to Ga3P states with C2v structure. In line with Ga3P, the 1A1(C2v) and 1A1(C3v) states of Ga3As are nearly degenerate. Electron detachment processes are presented and discussed for the Ga3As−/Ga3 As system on the basis of a C2v ground state geometry for the anion and the neutral molecule.