β-Ga2O3 nanowires sheathed with boron nitrogen

A new synthetic route was developed to obtain β-Ga2O3 nanowires by heating mixed B and Ga2O3 powder precursor at 1600 °C under Ar atmosphere. The nanowires have widths of 30–60 nm and perfect crystallinity. When the heating of B and Ga2O3 powder precursor was carried out in N2 atmosphere, β-Ga2O3 nanowires sheathed with BN layers (3–5 nm) were yielded. The structure and composition of the products were characterized. The growth scenario for the β-Ga2O3 nanowires as well as the formation of outer BN sheaths was also discussed.