Modeling photoinduced fluorescence enhancement in semiconductor nanocrystal arrays

Photoinduced fluorescence enhancement (PFE) in semiconductor nanocrystal (NC) arrays is modeled based on the rate equations for ground-state, excited-state and photoionized NCs in the array. The photoionization process is broken down into fast and slow ionization processes, which are expected to relate to blinking and darkening phenomena, respectively. Consequently, PFE behavior is found to change drastically, as it depends on both the intrinsic properties of NCs, and on external conditions, such as surface-capping molecules and atmosphere.