Author/Authors :
Chen، نويسنده , , K.W. and Yu، نويسنده , , Y.H. and Luo، نويسنده , , E.Z. and Xie، نويسنده , , Z. and Xu، نويسنده , , J.B. and Wilson، نويسنده , , I.H. and Bishop، نويسنده , , W.Y. and Shen، نويسنده , , D.S.، نويسنده ,
Abstract :
In this Letter, we present a study on mapping the morphology of the top interface on Si/buried oxide (BOX) in nanometer scale and the influence of nano-sized Si islands to the electronic properties of the BOX layer in separation by implantation of oxygen with conducting atomic force microscopy (C-AFM). By using C-AFM, both the morphology of the top interface on Si/BOX and the electronic properties of the BOX can be obtained simultaneously. Based on the analysis of the current–voltage (I–V) curves, the electronic properties of the BOX are also discussed.
