Title of article
Characterization of nano-sized Si islands in buried oxide layer of SIMOX by conducting AFM
Author/Authors
Chen، نويسنده , , K.W. and Yu، نويسنده , , Y.H. and Luo، نويسنده , , E.Z. and Xie، نويسنده , , Z. and Xu، نويسنده , , J.B. and Wilson، نويسنده , , I.H. and Bishop، نويسنده , , W.Y. and Shen، نويسنده , , D.S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
748
To page
752
Abstract
In this Letter, we present a study on mapping the morphology of the top interface on Si/buried oxide (BOX) in nanometer scale and the influence of nano-sized Si islands to the electronic properties of the BOX layer in separation by implantation of oxygen with conducting atomic force microscopy (C-AFM). By using C-AFM, both the morphology of the top interface on Si/BOX and the electronic properties of the BOX can be obtained simultaneously. Based on the analysis of the current–voltage (I–V) curves, the electronic properties of the BOX are also discussed.
Journal title
Chemical Physics Letters
Serial Year
2003
Journal title
Chemical Physics Letters
Record number
1782832
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