• Title of article

    A novel growth mode of alkane films on a SiO2 surface

  • Author/Authors

    Mo، نويسنده , , H. and Taub، نويسنده , , H. and Volkmann، نويسنده , , U.G. and Pino، نويسنده , , M. G. Ehrlich، نويسنده , , S.N. and Hansen، نويسنده , , F.Y. and Lu، نويسنده , , E. and Miceli، نويسنده , , P.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    7
  • From page
    99
  • To page
    105
  • Abstract
    Synchrotron X-ray specular scattering measurements confirm microscopically a structural model recently inferred by very-high-resolution ellipsometry of a solid dotriacontane (n-C32H66 or C32) film formed by adsorption from solution onto a SiO2 surface. Sequentially, one or two layers adsorb on the SiO2 surface with the long-axis of the C32 molecules oriented parallel to the interface followed by a C32 monolayer with the long-axis perpendicular to it. Finally, preferentially oriented bulk particles nucleate having two different crystal structures. This growth model differs from that found previously for shorter alkanes deposited from the vapor phase onto solid surfaces.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2003
  • Journal title
    Chemical Physics Letters
  • Record number

    1782883