Author/Authors :
Lee، نويسنده , , Kyung Sun and Mo، نويسنده , , Young Hwan and Nahm، نويسنده , , Kee Suk and Shim، نويسنده , , Hyun-Wook and Suh، نويسنده , , Eun Kyung and Kim، نويسنده , , Jae Ryoung and Kim، نويسنده , , Ju Jin، نويسنده ,
Abstract :
Carbon-coated nickel silicide nanowires (C-coated NiSi NWs) were prepared in a radio-frequency-induction heating chemical vapor deposition (RF-CVD) reactor. The growth of the NiSi nanowires and the coating of the NWs with carbon layers simultaneously took place in the reaction. The nanowires grew straight with the length of more than 10 μm and the average diameter ranging in 20–40 nm. The nanowires were coated with a carbon layer with thickness of 1.5–1.7 nm. The resistivity of individual NiSi nanowire was about 370 μΩ cm at room temperature and it decreased monotonically as the temperature was lowered and became saturated at low temperatures, indicating the growth of metallic NiSi nanowires.
