Title of article
Nitrogen-doped gallium phosphide nanowires
Author/Authors
Seo، نويسنده , , Hee Won and Bae، نويسنده , , Seung Yong and Park، نويسنده , , Jeunghee and Kang، نويسنده , , Myung-il and Kim، نويسنده , , Sangsig، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
420
To page
424
Abstract
Nitrogen-doped gallium phosphide nanowires were directly synthesized via a sublimation of ball-milled powders under ammonia flow. The average diameter of the nanowires is 40 nm and the length is about 500 μm. They consist of single-crystalline zinc blende structured crystals with the [1 1 1] growth direction. The photoluminescence shows the typical isoelectronic bound exciton peaks in the range 2.1–2.25 eV. The concentration of the doped nitrogen atoms is estimated to be about 1018 cm−3.
Journal title
Chemical Physics Letters
Serial Year
2003
Journal title
Chemical Physics Letters
Record number
1783253
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