Author/Authors :
Yang، نويسنده , , T.H. and Chen، نويسنده , , C.H and Chatterjee، نويسنده , , A and Li، نويسنده , , H.Y and Lo، نويسنده , , J.T. and Wu، نويسنده , , C.T and Chen، نويسنده , , K.H and Chen، نويسنده , , L.C، نويسنده ,
Abstract :
Silicon carbide nanorods with a typical diameter of about 20 nm and a length ranging from 100 nm to a few microns have been formed by rapid thermal processing (RTP) of thin films containing a mixture of carbon and iron over silicon wafers at temperatures ranging from 1000 to 1200 °C. It is proposed that SiC nanorods were formed by solid–liquid–solid process of Si and C with Fe as catalyst. The controllability offered by RTP is crucial as field emission study showed that the turn-on field of the SiC nanorods was a strong function of their length and number density.
