Author/Authors :
Kanbara، نويسنده , , T. and Shibata، نويسنده , , K. and Fujiki، نويسنده , , S. and Kubozono، نويسنده , , Y. and Kashino، نويسنده , , S. and Urisu، نويسنده , , T. and SAKAI، نويسنده , , M. and Fujiwara، نويسنده , , A. and Kumashiro، نويسنده , , R. and Tanigaki، نويسنده , , K.، نويسنده ,
Abstract :
N-channel field effect transistors (FETs) were fabricated with thin films of C60 and Dy@C82. A typical enhancement-type FET property was observed in C60 FET above 220 K. The mobility of C60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C82 FET was found to be a normally-on type FET, which has a property different from that for C60 and C70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C60 and pentacene thin-film FETs.
