Title of article :
Efficiency enhancement and retarded dark-spots growth of organic light-emitting devices by high-temperature processing
Author/Authors :
Chan، نويسنده , , M.Y and Lai، نويسنده , , S.L and Wong، نويسنده , , F.L and Lengyel، نويسنده , , O and Lee، نويسنده , , C.S. and Lee، نويسنده , , S.T، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
7
From page :
700
To page :
706
Abstract :
Device stability and growth of dark spots are major concerns for the large-scale applications of organic light-emitting devices (OLEDs). OLEDs with crystalline hole-transporting layer have been fabricated by depositing organic layers at elevated substrate temperatures. Such devices showed significant improvement in electroluminescent efficiency, morphological stability, storage stability, and also retarded dark-spot growth. The lower hole mobility in crystalline NPB films is attributed to the improved device performance, leading to a better carrier balancing in the NPB/AlQ3 interface. Such crystalline NPB films also demonstrate a smoother surface, even after high-temperature annealing, and gives beneficial advantages for improving the thermal durability of OLEDs.
Journal title :
Chemical Physics Letters
Serial Year :
2003
Journal title :
Chemical Physics Letters
Record number :
1783749
Link To Document :
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