Author/Authors :
Liu، نويسنده , , D.F. and Xie، نويسنده , , S.S. and Yan، نويسنده , , X.Q. and Ci، نويسنده , , L.J. and Shen، نويسنده , , F. and Wang، نويسنده , , J.X. and Zhou، نويسنده , , Z.P. and Yuan، نويسنده , , H.J. and Gao، نويسنده , , Y. and Song، نويسنده , , L. and Liu، نويسنده , , L.F. and Zhou، نويسنده , , W.Y. and Wang، نويسنده , , G.، نويسنده ,
Abstract :
We reported a simple method to synthesize coaxial nanocables with silicon carbide core and amorphous silicon oxide sheath just by exposure of Au-coated silicon substrates to carbon monoxide at 1100 °C. The as-grown product was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and micro-Raman spectroscopy. The obtained nanocables were in large scale, several tens of micrometers long, with the core a few nanometers to ten or more nanometers in diameter. The vapor–liquid–solid mechanism was proposed to elucidate the growth process.
