Title of article :
Thermal conductivity of isotopically enriched silicon
Author/Authors :
Ruf، نويسنده , , T. and Henn، نويسنده , , R.W. and Asen-Palmer، نويسنده , , M. and Gmelin، نويسنده , , E. and Cardona، نويسنده , , M. and Pohl، نويسنده , , H.-J. and Devyatych، نويسنده , , G.G. and Sennikov، نويسنده , , P.G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
243
To page :
247
Abstract :
By means of a steady-state heat-flow technique, we have measured the thermal conductivity in a bulk crystal of highly enriched (99.8588%) 28Si for temperatures between 2 and 310 K. Maximum values of about 30 000 W m−1 K−1 for κ are found around 20 K. This is six times larger than in natural silicon and even exceeds the maximum in diamond with natural isotope abundance. At room temperature, we obtain a thermal conductivity enhancement of almost 60% compared to natural Si. Our results agree well with theoretical predictions.
Keywords :
D. phonons , D. Heat conduction , A. Semiconductors
Journal title :
Solid State Communications
Serial Year :
2000
Journal title :
Solid State Communications
Record number :
1785698
Link To Document :
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