• Title of article

    Exciton–exciton scattering in GaAs/AlAs lateral superlattice

  • Author/Authors

    Venu Gopal، نويسنده , , A. and Vengurlekar، نويسنده , , A.S. and Laruelle، نويسنده , , F. and Etienne، نويسنده , , B. and Shah، نويسنده , , J.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    6
  • From page
    517
  • To page
    522
  • Abstract
    We perform time integrated degenerate four-wave mixing (DFWM) measurements to investigate exciton dephasing in a GaAs/AlAs lateral superlattice (LSL) with a tunable band gap modulation. The excitons are resonantly excited by femtosecond laser pulses. Under optimal conditions of growth layer alignment, the ground state excitons in the LSL are 1D. When the LSL growth is highly tilted, the 1D confining potential vanishes and the LSL effectively becomes a 2D system. The DFWM measurements for the 1D and 2D excitons show that the exciton–exciton scattering strength is significantly reduced in the 1D case. We find that disorder in the LSL cannot fully explain the observed large reduction. It is likely that reduction in dimensionality plays an important role in this.
  • Keywords
    A. Nanostructures , E. Time-resolved optical spectroscopies , A. Semiconductors
  • Journal title
    Solid State Communications
  • Serial Year
    2000
  • Journal title
    Solid State Communications
  • Record number

    1785824