Growth and microstructure of Ga2O3 nanorods

Gallium oxide (Ga2O3) nanorods were prepared by a dc arc-discharge between a graphite anode filled with a mixture of GaN, graphite and nickel powders and a graphite cathode in helium atmosphere. The structure and composition of the product were determined by high-resolution transmission electron microscopy and high spatial resolution electron energy-loss spectroscopy. The Ga2O3 nanorods have diameters in the range of 5–50 nm and a length of up to 30 μm. Specific features of their microstructure and the growth mechanism are discussed.