Title of article :
Visible luminescence of nanocrystalline AlN:Er thin film by co-deposition of AlN, Er, and SiO2
Author/Authors :
Lim، نويسنده , , J.-W. and Takayama، نويسنده , , W. and Zhu، نويسنده , , Y.F. and Bae، نويسنده , , J.W. and Wang، نويسنده , , J.F. and Ji، نويسنده , , S.Y. and Mimura، نويسنده , , K. W. Yoo، نويسنده , , J.H. and Isshiki، نويسنده , , M.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2007
Pages :
4
From page :
236
To page :
239
Abstract :
We report a visible luminescence of Er3+ ions in an amorphous-nanocrystalline AlN:Er thin film prepared by co-deposition using AlN, Er, and SiO2 targets. A PL emission spectrum of Er3+ in the AlN:Er film annealed at 750 °C showed a strong bluish green emission of Er3+ in the amorphous-nanocrystalline AlN:Er thin film, which is attributed to the intra-4fEr3+ transitions of 2H11/2 → 4I15/2 and 4F7/2 → 4I15/2. It was found that crystallite diameters were between 3 and 5 nm by high-resolution transmission electron microscopy. The occurrence of the strong Er3+ emission in the annealed AlN:Er thin film with a mixture of amorphous and nanocrystalline phases may be contributed to an increase in the number of excitation Er3+ centers and a presence of oxygen related to Er3+ excitation and recombination process in the AlN:Er thin film.
Keywords :
Erbium , Thin film , Aluminium nitride , Deposition , Luminescence
Journal title :
Current Applied Physics
Serial Year :
2007
Journal title :
Current Applied Physics
Record number :
1785838
Link To Document :
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