Author/Authors :
Kempa، نويسنده , , H and Kopelevich، نويسنده , , Y and Mrowka، نويسنده , , F and Setzer، نويسنده , , A and Torres، نويسنده , , J.H.S and Hِhne، نويسنده , , R and Esquinazi، نويسنده , , P، نويسنده ,
Abstract :
A magnetic-field-driven transition from metallic- to semiconducting-type behavior in the basal-plane resistance takes place in highly oriented pyrolytic graphite at a field Hc∼1 kOe applied along the hexagonal c-axis. The analysis of the data reveals a striking similarity between this transition and that measured in thin-film superconductors and Si MOSFETs. However, in contrast to those materials, the transition in graphite is observable at almost two orders of magnitude higher temperatures.
