Title of article
Formation of hexagonal-wurtzite germanium by pulsed laser ablation
Author/Authors
Zhang، نويسنده , , Y and Iqbal، نويسنده , , Z and Vijayalakshmi، نويسنده , , S and Qadri، نويسنده , , S and Grebel، نويسنده , , H، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
657
To page
660
Abstract
A stable phase of relatively large hexagonal-wurtzite germanium (lonsdaleite) crystals (up to 10 μm) was formed when germanium was directly deposited at low pressure using pulsed ultraviolet laser ablation. Films were grown on various substrates at room temperature from a single crystal, cubic germanium target. Crystallites of the hexagonal-wurtzite phase of germanium were clearly identified using selected area electron diffraction. Further characterizations of the films were made using X-ray diffraction and confocal scanning micro-Raman spectroscopy.
Keywords
A. Thin films , B. Laser processing , C. Crystal structure and symmetry
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1785916
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