• Title of article

    Formation of hexagonal-wurtzite germanium by pulsed laser ablation

  • Author/Authors

    Zhang، نويسنده , , Y and Iqbal، نويسنده , , Z and Vijayalakshmi، نويسنده , , S and Qadri، نويسنده , , S and Grebel، نويسنده , , H، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    4
  • From page
    657
  • To page
    660
  • Abstract
    A stable phase of relatively large hexagonal-wurtzite germanium (lonsdaleite) crystals (up to 10 μm) was formed when germanium was directly deposited at low pressure using pulsed ultraviolet laser ablation. Films were grown on various substrates at room temperature from a single crystal, cubic germanium target. Crystallites of the hexagonal-wurtzite phase of germanium were clearly identified using selected area electron diffraction. Further characterizations of the films were made using X-ray diffraction and confocal scanning micro-Raman spectroscopy.
  • Keywords
    A. Thin films , B. Laser processing , C. Crystal structure and symmetry
  • Journal title
    Solid State Communications
  • Serial Year
    2000
  • Journal title
    Solid State Communications
  • Record number

    1785916