• Title of article

    Absorption coefficient of wurtzite GaN calculated from an empirical tight binding model

  • Author/Authors

    Jogai، نويسنده , , B.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    5
  • From page
    153
  • To page
    157
  • Abstract
    The linear absorption coefficient for polarizations parallel and perpendicular to the c-axis of wurtzite GaN is calculated by integrating the momentum matrix element over the full Brillouin zone using a fundamental numerical technique. The energy band structure and wave functions required for this calculation are obtained using an sp3d5–sp3 empirical tight-binding method (ETBM) that includes the spin–orbit and up to second-nearest-neighbor interactions. The model reproduces the selection rules expected from symmetry considerations.
  • Keywords
    A. Semiconductors , A. Thin films , D. Electronic band structure , D. Spin–orbit effects
  • Journal title
    Solid State Communications
  • Serial Year
    2000
  • Journal title
    Solid State Communications
  • Record number

    1786038