Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities

The photoluminescence from asymmetric microcavities consisting of AlAs/GaAs Bragg mirror and InGaAs/InGaAsP quantum-well cavity layer was studied in different geometry. The cavity mode in the nearly in-plane photoluminescence is explained by the constructive interference for light leaving the sample near the angle of total reflection. The vacuum Rabi-splitting, the intensity enhancement of the cavity mode and the motional narrowing are demonstrated in the temperature-dependent photoluminescence, hence obtaining initial evidences of strong coupling between the exciton and the cavity mode in the nearly in-plane direction. Our studies also suggest that the linear dispersion model provides a better description of the exciton–photon interaction of microcavities in the in-plane direction.