Title of article :
The double level calculation of oxygen related donor states in Si and SiO2
Author/Authors :
Xu، نويسنده , , M.Z. and Tan، نويسنده , , C.H. and Mao، نويسنده , , L.F.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
A calculation of the levels related to oxygen donors in Si and SiO2 has been performed based on a helium-like model. These calculations agree well with the experimental data while the energies of these levels are in the ratio of about 2:1 and the effective radii of these levels are in the ratio of about 2:1.
Keywords :
A. Insulator , D. Electronic states (localized) , A. Semiconductor
Journal title :
Solid State Communications
Journal title :
Solid State Communications
