Title of article
Many carrier effects in self-assembled InP quantum dots
Author/Authors
Sugisaki، نويسنده , , M and Ren، نويسنده , , H.-W and Nair، نويسنده , , S.V and Nishi، نويسنده , , K and Masumoto، نويسنده , , Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
435
To page
440
Abstract
Excitation power density dependence of InP self-assembled quantum dots (SADs) was investigated under band-to-band excitation in a Ga0.5In0.5P matrix by means of macro- (conventional) and micro-spectroscopy. State filling of confined excitonic states was studied in detail by micro-photoluminescence (μ-PL) spectra and images. The efficiency of the state filling differs from dot to dot, which depends on the inflow and outflow rates of the excitons. Sharp μ-PL lines from a single confined exciton and biexciton were clearly observed. The observed biexciton binding energy of an InP SAD is a few times larger than that of the bulk InP, suggesting that the multi-exciton states are stabilized because of the confinement.
Keywords
E. Luminescence , A. Nanostructures , C. Crystal structure and symmetry , D. Optical properties
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1786501
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