Author/Authors :
Taliercio، نويسنده , , T and Gallart، نويسنده , , M and Lefebvre، نويسنده , , P and Morel، نويسنده , , A and Gil، نويسنده , , B and Allègre، نويسنده , , J and Grandjean، نويسنده , , N and Massies، نويسنده , , J and Grzegory، نويسنده , , I and Porowski، نويسنده , , S، نويسنده ,
Abstract :
We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.
