Title of article
Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN–GaAlN quantum wells grown by molecular beam epitaxy
Author/Authors
Taliercio، نويسنده , , T and Gallart، نويسنده , , M and Lefebvre، نويسنده , , P and Morel، نويسنده , , A and Gil، نويسنده , , B and Allègre، نويسنده , , J and Grandjean، نويسنده , , N and Massies، نويسنده , , J and Grzegory، نويسنده , , I and Porowski، نويسنده , , S، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
445
To page
448
Abstract
We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.
Keywords
A. Quantum wells , B. Epitaxy , E. Time-resolved optical spectroscopies
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1786511
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