Title of article
Modifications of structural, optical and electrical properties of nanocrystalline bismuth sulphide by using swift heavy ions
Author/Authors
Ahire، نويسنده , , R.R. and Sagade، نويسنده , , Abhay A. and Chavhan، نويسنده , , S.D. and Huse، نويسنده , , V. and Gudage، نويسنده , , Y.G. and Singh، نويسنده , , F. and Avasthi، نويسنده , , D.K. and Phase، نويسنده , , D.M. and Sharma، نويسنده , , Ramphal، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2009
Pages
6
From page
374
To page
379
Abstract
Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 °C and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/cm2 fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model.
Keywords
Annealing , Bismuth sulphide , Thermal spike , Thermoemf , grain growth , SHI
Journal title
Current Applied Physics
Serial Year
2009
Journal title
Current Applied Physics
Record number
1786571
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