Magneto-tunneling injection device (MAGTID)

Ferromagnetic double barrier stacked tunnel junctions with an access to the intermediate metal layer have been developed. The device is named magneto-tunneling injection device (MAGTID). The fabrication procedure of these three terminal thin film devices is described. First measurements on tunnel magnetoresistance effect of one junction, while using the second junction as a spin injector are reported. We observed a variation of the magnetoresistance of the detector junction with increasing injection current. The results are presented in the framework of non-equilibrium spin accumulation in the middle layer. Possible future experiments on the excitation of layer magnetization and stimulated emission of spin waves in magnetic three terminal devices are discussed.