Title of article
Size-driven phase transition in stress-induced ferroelectric thin films
Author/Authors
Zhang، نويسنده , , Jian and Yin، نويسنده , , Zhen and Zhang، نويسنده , , Ming-Sheng and Scott، نويسنده , , James F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
241
To page
246
Abstract
We have developed a concise phenomenological theory to investigate phase transitions and dielectric properties of ferroelectric thin films under stress. When the polarization at the surface is greater than that in the interior of the film, competition between the ‘superpolarized’ surface and tensile stress leads to a ferroelectric–paraelectric transition above a critical stress. This model is appropriate for the data on stress-induced barium–strontium titanate (BST) thin-film ferroelectric memory devices [Jpn. J. Appl. Phys. 36 (1997) 5846]. Stress–thickness phase diagrams are presented for PbTiO3 and BaTiO3 ferroelectric thin films.
Keywords
A. Thin films , B. Epitaxy , D. Phase transitions , B. Laser processing , D. Dielectric response , A. Ferroelectrics
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1786739
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