• Title of article

    Size-driven phase transition in stress-induced ferroelectric thin films

  • Author/Authors

    Zhang، نويسنده , , Jian and Yin، نويسنده , , Zhen and Zhang، نويسنده , , Ming-Sheng and Scott، نويسنده , , James F.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    6
  • From page
    241
  • To page
    246
  • Abstract
    We have developed a concise phenomenological theory to investigate phase transitions and dielectric properties of ferroelectric thin films under stress. When the polarization at the surface is greater than that in the interior of the film, competition between the ‘superpolarized’ surface and tensile stress leads to a ferroelectric–paraelectric transition above a critical stress. This model is appropriate for the data on stress-induced barium–strontium titanate (BST) thin-film ferroelectric memory devices [Jpn. J. Appl. Phys. 36 (1997) 5846]. Stress–thickness phase diagrams are presented for PbTiO3 and BaTiO3 ferroelectric thin films.
  • Keywords
    A. Thin films , B. Epitaxy , D. Phase transitions , B. Laser processing , D. Dielectric response , A. Ferroelectrics
  • Journal title
    Solid State Communications
  • Serial Year
    2001
  • Journal title
    Solid State Communications
  • Record number

    1786739