Title of article
Thermal effect on quantum confinement in ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells
Author/Authors
Lo، نويسنده , , Ikai and Lee، نويسنده , , K.H. and Tu، نويسنده , , Li-Wei and Tsai، نويسنده , , J.K. and Mitchel، نويسنده , , W.C. and Tu، نويسنده , , R.C and Su، نويسنده , , Y.K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
155
To page
160
Abstract
ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells (QW) were studied by temperature-dependent photoluminescence (PL) measurement. We observed two PL peaks due to the band-to-band transition in ZnS0.06Se0.94 barrier, Eg(0)=2.819 eV, and the transition of heavy hole to first conduction subband in Zn0.8Cd0.2Se well, Ehh1(0)=2.545 eV. The relative thermal coefficients of these two constituent materials are quite different, resulting in a temperature-dependent quantum confinement. The reduction of the quantum confinement at high temperatures induces a leakage of carrier and leads to a quenching of the PL intensity. The activation energy for the PL quench is about 188.4 meV.
Keywords
A. Semiconductors , D. Optical properties , E. Luminescence
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1787052
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