Title of article :
Structural effect on electronic sputtering of hydrogenated amorphous carbon films
Author/Authors :
Ghosh، نويسنده , , S. and Ingale، نويسنده , , Alka and Som، نويسنده , , T. and Kabiraj، نويسنده , , D. and Tripathi، نويسنده , , A. and Mishra، نويسنده , , S. and Zhang، نويسنده , , S. and Hong، نويسنده , , X. and Avasthi، نويسنده , , D.K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
A large erosion (∼105 atoms/ion) of C and H from hydrogenated amorphous carbon films (a-C:H) is observed due to the bombardment of 150 MeV Ag13+ ions. The erosion rate is monitored on-line by elastic recoil detection analysis (ERDA) technique. From the set of four samples under study, two films show erosion of both C and H, whereas, only H depletion takes place from the other two films. The observed variation in sputtering yield in different films is explained on the basis of structure and chemical environment of the films. It is shown in the framework of thermal spike model that the thermal energy confinement due to smaller cluster or domain sizes of the film influences the erosion. Structure of the films is revealed by Raman spectroscopy and is discussed on the basis of their Raman G and D modes.
Keywords :
D. Raman spectroscopy , D. Swift heavy ion , D. Electronic sputtering , D. Hydrogenated amorphous carbon , D. Elastic recoil detection analysis , D. Thermal spike
Journal title :
Solid State Communications
Journal title :
Solid State Communications