Author/Authors :
Wang، نويسنده , , Yu-Lin and Ren، نويسنده , , F. and Lim، نويسنده , , Wantae and Pearton، نويسنده , , S.J. and Baik، نويسنده , , Kwang Hyeon and Hwang، نويسنده , , Sung-Min and Gon Seo، نويسنده , , Yong and Jang، نويسنده , , Soohwan، نويسنده ,
Abstract :
Pd and Pt Schottky diodes on non-polar a-plane (11–20) GaN layers show large increases in both forward and reverse bias current upon exposure to 4% H2 in N2. The barrier height reduction due to hydrogen exposure is 0.11 eV for Pd/GaN and 0.14 eV for Pt/GaN, with long recovery times (>25 min) at room temperature. The sensitivity to hydrogen is significantly greater than for diodes on conventional c-plane (Ga-polar) GaN, but less than for c-plane (N-polar) material. The diode characteristics remain rectifying after exposure to hydrogen, unlike the case of N-polar GaN where Ohmic behavior is observed.
Keywords :
Hydrogen , GaN , sensing , a-Plane
