Title of article :
Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III–V nitride quantum wells
Author/Authors :
Wan ، نويسنده , , Shou-Pu and Xia، نويسنده , , Jian-Bai، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
6
From page :
287
To page :
292
Abstract :
Excitonic states in AlxGa1−xN/GaN quantum wells (QWs) are studied within the framework of effective-mass theory. Spontaneous and piezoelectric polarizations are included and their impact on the excitonic states and optical properties are studied. We witnessed a significant blue shift in transition energy when the barrier width decreases and we attributed this to the redistribution of the built-in electric field between well layers and barrier layers. For the exciton the binding energies, we found in narrow QWs that there exists a critical value for barrier width, which demarcates the borderline for quantum confinement effect and the quantum confined Stark effect. Exciton and free carrier radiative lifetimes are estimated by simple argumentation. The calculated results suggest that there are efficient non-radiative mechanisms in narrow barrier QWs.
Keywords :
A. Quantum wells , D. Piezoelectricity , A. Semiconductors , D. Optical properties
Journal title :
Solid State Communications
Serial Year :
2002
Journal title :
Solid State Communications
Record number :
1787300
Link To Document :
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