Effect of nitrogen on the exciton binding energy in GaxIn1−xNyAs1−y/GaAs quantum well

The binding energy of ground state exciton in GaxIn1−xNyAs1−y/GaAs single quantum well is studied theoretically. We have calculated the exciton binding energy by a variational envelope-function procedure using simple two-band model, including strains and the difference in dielectric constants between well and barrier materials. The influence of the well width and nitrogen and indium mole fractions on the value of binding energy has been analyzed. It has been observed that incorporation of small amounts of nitrogen (up to 5%) induces significant changes of the exciton binding energy.