Title of article :
Magnetic and transport properties, and electronic structure of the layered chalcogenide AgCrSe2
Author/Authors :
Gautam، نويسنده , , Ujjal K and Seshadri، نويسنده , , Ram and Vasudevan، نويسنده , , S and Maignan، نويسنده , , A، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
We report a detailed study of the magnetic and transport properties of polycrystalline AgCrSe2, a layered magnetic chalcogenide that orders antiferromagnetically without frustration at 55 K. The magnetic ordering corresponds to in-plane ferromagnetic interactions with antiferromagnetic coupling between the planes. Transport studies suggest a semiconductor that is at the I–M transition boundary in terms of its resistivity, with variable-range hopping behavior at intermediate temperatures and Efros–Shklovskii hopping at low temperatures. At high temperatures (>340 K) the temperature coefficient of resistance turns positive as a result, we believe, of disorder in the silver sub-lattice. First principles density functional calculations of the electronic structure suggest a magnetic insulator ground state, and means to tune the system to ferromagnetic half-metal.
Keywords :
A. AgCrSe2 , Magnetic semiconductors , Antiferromagnetics , Low-dimensional electronic structure
Journal title :
Solid State Communications
Journal title :
Solid State Communications