Title of article
Pressure dependence of the transport critical current density in optimally doped Hg0.82Re0.18Ba2Ca2Cu3O8+δ polycrystalline compound
Author/Authors
Gonzلlez، نويسنده , , J.L and Orlando، نويسنده , , M.T.D and de Mello، نويسنده , , E.V.L and Yugue، نويسنده , , E.S and Baggio-Saitovitch، نويسنده , , E، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
405
To page
409
Abstract
We report a study on the pressure dependence of the transport critical current density (Jct) in a polycrystalline sample of Hg0.82Re0.18Ba2Ca2Cu3O8+δ with the optimum oxygen content. The rate of increase for Jct with pressure is ∂PJct/Jct=7.1×10−2 kbar−1 while ∂PTc/Tc=1.67×10−3 kbar−1. The data were analyzed within the framework of a phenomenological model, which takes into account the granular structure of the ceramic sample. An analytical expression is found which relates the ∂PJct/Jct and ∂PTc/Tc rates. In our experimental conditions, the increase of the superconductor gap at zero temperature was considered to be the main factor responsible for the increase of Jct with pressure.
Keywords
A. High-Tc superconductors , E. Strain , C. Grain boundaries , High-pressure
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1787507
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