• Title of article

    Pressure dependence of the transport critical current density in optimally doped Hg0.82Re0.18Ba2Ca2Cu3O8+δ polycrystalline compound

  • Author/Authors

    Gonzلlez، نويسنده , , J.L and Orlando، نويسنده , , M.T.D and de Mello، نويسنده , , E.V.L and Yugue، نويسنده , , E.S and Baggio-Saitovitch، نويسنده , , E، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    5
  • From page
    405
  • To page
    409
  • Abstract
    We report a study on the pressure dependence of the transport critical current density (Jct) in a polycrystalline sample of Hg0.82Re0.18Ba2Ca2Cu3O8+δ with the optimum oxygen content. The rate of increase for Jct with pressure is ∂PJct/Jct=7.1×10−2 kbar−1 while ∂PTc/Tc=1.67×10−3 kbar−1. The data were analyzed within the framework of a phenomenological model, which takes into account the granular structure of the ceramic sample. An analytical expression is found which relates the ∂PJct/Jct and ∂PTc/Tc rates. In our experimental conditions, the increase of the superconductor gap at zero temperature was considered to be the main factor responsible for the increase of Jct with pressure.
  • Keywords
    A. High-Tc superconductors , E. Strain , C. Grain boundaries , High-pressure
  • Journal title
    Solid State Communications
  • Serial Year
    2002
  • Journal title
    Solid State Communications
  • Record number

    1787507