Title of article :
Nonlocal voltage in a spin field effect transistor with finite channel width
Author/Authors :
Eom، نويسنده , , Jonghwa and Koo، نويسنده , , Hyun Cheol and Chang، نويسنده , , Joonyeon and Han، نويسنده , , Suk Hee، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2011
Pages :
4
From page :
276
To page :
279
Abstract :
Spin transport in the two-dimensional electron gas with strong spin–orbit interaction is examined by using a simple phenomenological simulation. The large spin–orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin–orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.
Keywords :
Spin–orbit interaction , Spin field effect transistor , Rashba spin splitting
Journal title :
Current Applied Physics
Serial Year :
2011
Journal title :
Current Applied Physics
Record number :
1787654
Link To Document :
بازگشت