Title of article
Resonance Raman spectroscopy of Ga1−xAlxAs mediated via compositional variation
Author/Authors
Lockwood، نويسنده , , D.J and Wasilewski، نويسنده , , Z.R، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
261
To page
264
Abstract
A specially prepared Ga1−xAlxAs sample with a laterally graded alloy composition has allowed a novel investigation of resonance Raman scattering from the optical phonons. Instead of varying the exciting light energy, the resonance is probed by changing the alloy composition at fixed incident energy. Both incoming and outgoing resonances are observed at the direct gap of the alloy, free of the usual overwhelming photoluminescence background.
Keywords
D. Electronic band structure , E. Inelastic light scattering , A. Disordered systems , A. Semiconductors , D. phonons
Journal title
Solid State Communications
Serial Year
2003
Journal title
Solid State Communications
Record number
1787902
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