Photoluminescence of doped and undoped laser crystallized polycrystalline silicon

Photoluminescence (PL) measurements were performed on thin doped and undoped laser crystallized polycrystalline silicon films. The spectra reveal a single peak around 0.98 eV that is attributed to band-tail luminescence. P and B doping reduces the PL intensity while the defect density remains constant. The reduction of the PL intensity is accompanied by a shift of the PL band to higher energies with increasing doping concentration.