Effect of changing incident wavelength on Raman features of optical phonons in SiC nanorods and TaC nanowires

Novel Raman scattering in polar semiconductor SiC and TaC one-dimensional materials have been carried out. With increasing incident laser wavelength from 488 to 633 nm there is a huge difference in Raman intensity enhancement for the LO/IF peaks and the TO peak. This has been interpreted as due to Frِhlich interaction and abundant defects in polar nano-scale semiconductor materials.