Title of article
Effect of changing incident wavelength on Raman features of optical phonons in SiC nanorods and TaC nanowires
Author/Authors
Yan، نويسنده , , Yan and Zhang، نويسنده , , Shu-Lin and Fan، نويسنده , , Shoushan and Han، نويسنده , , Weiqiang and Meng، نويسنده , , Guomen and Zhang، نويسنده , , Lide، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
3
From page
649
To page
651
Abstract
Novel Raman scattering in polar semiconductor SiC and TaC one-dimensional materials have been carried out. With increasing incident laser wavelength from 488 to 633 nm there is a huge difference in Raman intensity enhancement for the LO/IF peaks and the TO peak. This has been interpreted as due to Frِhlich interaction and abundant defects in polar nano-scale semiconductor materials.
Keywords
D. Raman resonance , A. Polar semiconductors , A. Low-dimension- and nano-structures , A. SiC nanorods
Journal title
Solid State Communications
Serial Year
2003
Journal title
Solid State Communications
Record number
1788070
Link To Document