Title of article :
Alumina capped ZnO quantum dots multilayer grown by pulsed laser deposition
Author/Authors :
Barik، نويسنده , , S. and Srivastava، نويسنده , , A.K. and Misra، نويسنده , , P. and Nandedkar، نويسنده , , R.V. and Kukreja، نويسنده , , L.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
To extend the applicability of ZnO, with the bulk band gap of about 3.3 eV, into deep UV region, we have grown a multilayer of alumina capped ZnO quantum dots of mean in-plane sizes in the range of ∼1.8–3.6 nm at room temperature using alternate Pulsed Laser Deposition. Size dependent blue shift of the band gap of these dots up to ∼4.5 eV is observed in the optical absorbance spectra. The observed blue shift can be understood using the effective mass approximation in weak and strong confinement regimes.
Keywords :
A. Nanostructures , A. II–VI Semiconductors , D. Optical properties , B. Pulsed Laser Deposition
Journal title :
Solid State Communications
Journal title :
Solid State Communications